Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1-xGex/Si substrate
Identifieur interne : 003089 ( Main/Repository ); précédent : 003088; suivant : 003090Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1-xGex/Si substrate
Auteurs : RBID : Pascal:11-0330715Descripteurs français
- Pascal (Inist)
- Mécanisme croissance, Morphologie surface, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Arséniure de gallium, Autoassemblage, Epitaxie jet moléculaire, Microscopie force atomique, Degré recouvrement, Densité élevée, Longueur diffusion, Silicium, Germanium, Adatome, Couche monomoléculaire, Nanostructure, InAs, Substrat germanium, Substrat GaAs, Substrat Si1-xGex, Si, 6855A, 6855J, 8105E, 8107T.
English descriptors
- KwdEn :
- Adatoms, Atomic force microscopy, Coverage rate, Gallium arsenides, Germanium, Growth mechanism, High density, III-V compound, III-V semiconductors, Indium arsenides, Molecular beam epitaxy, Monolayers, Nanostructured materials, Nanostructures, Quantum dots, Scattering lengths, Self-assembly, Silicon, Surface morphology.
Abstract
We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si1-xGex/Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si1-xGex/Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized using atomic force microscopy (AFM). The undulation originating from the graded Si1-xGex/Si substrate causes no noticeable change in dot densities and dot dimensions across the undulated surface. The effects of V/III ratio and InAs coverage on structural properties of the QDs were investigated. The dot density increases with increasing V/III ratio and QDs with high density of 1011 cm-2 were obtained, attributed to the reduced diffusion length of the adatoms. Lateral dimension of the QDs increases as the InAs coverage increases. The QDs coalesce at 3.0 monolayer (ML) InAs coverage. This work is beneficial to those working on III-V on Si integration.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si<sub>1-x</sub>Ge<sub>x</sub>/Si substrate</title><author><name sortKey="Liang, Y Y" uniqKey="Liang Y">Y. Y. Liang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Singapore-MIT Alliance, Nanyang Drive</s1><s2>Singapore 637460</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 637460</wicri:noRegion></affiliation></author><author><name sortKey="Yoon, S F" uniqKey="Yoon S">S. F. Yoon</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Singapore-MIT Alliance, Nanyang Drive</s1><s2>Singapore 637460</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 637460</wicri:noRegion></affiliation></author><author><name sortKey="Ngo, C Y" uniqKey="Ngo C">C. Y Ngo</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Materials Research and Engineering, Faculty of Engineering, 3 Research Link</s1><s2>Singapore 117602</s2><s3>SGP</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117602</wicri:noRegion></affiliation></author><author><name sortKey="Tanoto, H" uniqKey="Tanoto H">H. Tanoto</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Materials Research and Engineering, Faculty of Engineering, 3 Research Link</s1><s2>Singapore 117602</s2><s3>SGP</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117602</wicri:noRegion></affiliation></author><author><name sortKey="Chen, K P" uniqKey="Chen K">K. P. Chen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Singapore-MIT Alliance, Nanyang Drive</s1><s2>Singapore 637460</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 637460</wicri:noRegion></affiliation></author><author><name sortKey="Loke, W K" uniqKey="Loke W">W. K. Loke</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation></author><author><name sortKey="Fitzgerald, E A" uniqKey="Fitzgerald E">E. A. Fitzgerald</name><affiliation wicri:level="4"><inist:fA14 i1="04"><s1>Department of Materials Science and Engineering, Massachusetts Institute of Technology</s1><s2>Cambridge, MA 02139</s2><s3>USA</s3><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Cambridge (Massachusetts)</settlement><region type="state">Massachusetts</region></placeName><orgName type="university">Massachusetts Institute of Technology</orgName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Singapore-MIT Alliance, Massachusetts Avenue</s1><s2>Cambridge, MA 02139</s2><s3>USA</s3><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Cambridge, MA 02139</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0330715</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0330715 INIST</idno><idno type="RBID">Pascal:11-0330715</idno><idno type="wicri:Area/Main/Corpus">002D36</idno><idno type="wicri:Area/Main/Repository">003089</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Adatoms</term><term>Atomic force microscopy</term><term>Coverage rate</term><term>Gallium arsenides</term><term>Germanium</term><term>Growth mechanism</term><term>High density</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Molecular beam epitaxy</term><term>Monolayers</term><term>Nanostructured materials</term><term>Nanostructures</term><term>Quantum dots</term><term>Scattering lengths</term><term>Self-assembly</term><term>Silicon</term><term>Surface morphology</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Mécanisme croissance</term><term>Morphologie surface</term><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Point quantique</term><term>Nanomatériau</term><term>Arséniure de gallium</term><term>Autoassemblage</term><term>Epitaxie jet moléculaire</term><term>Microscopie force atomique</term><term>Degré recouvrement</term><term>Densité élevée</term><term>Longueur diffusion</term><term>Silicium</term><term>Germanium</term><term>Adatome</term><term>Couche monomoléculaire</term><term>Nanostructure</term><term>InAs</term><term>Substrat germanium</term><term>Substrat GaAs</term><term>Substrat Si1-xGex</term><term>Si</term><term>6855A</term><term>6855J</term><term>8105E</term><term>8107T</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si<sub>1-x</sub>Ge<sub>x</sub>/Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si<sub>1-x</sub>Ge<sub>x</sub>/Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized using atomic force microscopy (AFM). The undulation originating from the graded Si<sub>1-x</sub>Ge<sub>x</sub>/Si substrate causes no noticeable change in dot densities and dot dimensions across the undulated surface. The effects of V/III ratio and InAs coverage on structural properties of the QDs were investigated. The dot density increases with increasing V/III ratio and QDs with high density of 10<sup>11</sup> cm<sup>-2</sup> were obtained, attributed to the reduced diffusion length of the adatoms. Lateral dimension of the QDs increases as the InAs coverage increases. The QDs coalesce at 3.0 monolayer (ML) InAs coverage. This work is beneficial to those working on III-V on Si integration.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>323</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si<sub>1-x</sub>Ge<sub>x</sub>/Si substrate</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, Germany, 22-27 August, 2010</s1></fA09><fA11 i1="01" i2="1"><s1>LIANG (Y. Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>YOON (S. F.)</s1></fA11><fA11 i1="03" i2="1"><s1>NGO (C. Y)</s1></fA11><fA11 i1="04" i2="1"><s1>TANOTO (H.)</s1></fA11><fA11 i1="05" i2="1"><s1>CHEN (K. P.)</s1></fA11><fA11 i1="06" i2="1"><s1>LOKE (W. K.)</s1></fA11><fA11 i1="07" i2="1"><s1>FITZGERALD (E. A.)</s1></fA11><fA12 i1="01" i2="1"><s1>GEELHAAR (Lutz)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>HEYN (Christian)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>WIECK (Andreas D.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Singapore-MIT Alliance, Nanyang Drive</s1><s2>Singapore 637460</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Materials Research and Engineering, Faculty of Engineering, 3 Research Link</s1><s2>Singapore 117602</s2><s3>SGP</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Materials Science and Engineering, Massachusetts Institute of Technology</s1><s2>Cambridge, MA 02139</s2><s3>USA</s3><sZ>7 aut.</sZ></fA14><fA14 i1="05"><s1>Singapore-MIT Alliance, Massachusetts Avenue</s1><s2>Cambridge, MA 02139</s2><s3>USA</s3><sZ>7 aut.</sZ></fA14><fA15 i1="01"><s1>Paul-Drude-Institut für Festkörperelektronik</s1><s2>Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>University of Hambourg</s1><s3>DEU</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>University of Bochum</s1><s3>DEU</s3><sZ>3 aut.</sZ></fA15><fA20><s1>426-430</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000190370281060</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0330715</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si<sub>1-x</sub>Ge<sub>x</sub>/Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si<sub>1-x</sub>Ge<sub>x</sub>/Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized using atomic force microscopy (AFM). The undulation originating from the graded Si<sub>1-x</sub>Ge<sub>x</sub>/Si substrate causes no noticeable change in dot densities and dot dimensions across the undulated surface. The effects of V/III ratio and InAs coverage on structural properties of the QDs were investigated. The dot density increases with increasing V/III ratio and QDs with high density of 10<sup>11</sup> cm<sup>-2</sup> were obtained, attributed to the reduced diffusion length of the adatoms. Lateral dimension of the QDs increases as the InAs coverage increases. The QDs coalesce at 3.0 monolayer (ML) InAs coverage. This work is beneficial to those working on III-V on Si integration.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15A</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A07T</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Morphologie surface</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Surface morphology</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Point quantique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Quantum dots</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Autoassemblage</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Self-assembly</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Degré recouvrement</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Coverage rate</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Grado recubrimiento</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Densité élevée</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>High density</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Densidad elevada</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Longueur diffusion</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Scattering lengths</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Germanium</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Germanium</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Adatome</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Adatoms</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Couche monomoléculaire</s0><s5>30</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Monolayers</s0><s5>30</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Nanostructure</s0><s5>31</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Nanostructures</s0><s5>31</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Substrat germanium</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Substrat GaAs</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Substrat Si1-xGex</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Si</s0><s4>INC</s4><s5>50</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>6855A</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>6855J</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8105E</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>8107T</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>227</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE 2010 International Conference on Molecular Beam Epitaxy</s1><s2>16</s2><s3>Berlin DEU</s3><s4>2010-08-22</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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